Banchuin, R. and Chaisricharoen, R. (2019). The SDE based stochastic analysis of active filter. In 2019 22nd International Symposium on Wireless Personal Multimedia Communications (WPMC) (p. 1-4). Lisbon, Portugal: IEEE.
Banchuin, R., & Chaisricharoen, R. (2020, March). The FDE Based Time Domain Analysis of Nonzero Input/Nonzero Damping Ratio Fractional Order Biquadratic System. In 2020 Joint International Conference on Digital Arts, Media and Technology with ECTI Northern Section Conference on Electrical, Electronics, Computer and Telecommunications Engineering (ECTI DAMT & NCON) (pp.
Banchuin, R., & Chaisricharoen, R. (2019, July). The stochastic analysis of OTA-C Filter. In 2019 16th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON) (pp. 175-178). n.p.: IEEE.
Banchuin, R., & Chaisricharoen, R. (2019, April). An SDE based Stochastic Analysis of Transformer. In 2019 Joint International Conference on Digital Arts, Media and Technology with ECTI Northern Section Conference on Electrical, Electronics, Computer and Telecommunications Engineering (ECTI DAMT-NCON) (pp. 310-313). Nan, Thailand . ECTI (sponsored by IEEE).
Banchuin R., & Chaisricharoen R. (2018, July). A tensor algebraic model of On-chip monolithic transformer. In 2018 15th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON). n.p.: IEEE.
Banchuin R., & Chaisricharoen R. (2017). Time domain FDE based analysis of active fractional circuit. In 2018 International Conference on Digital Arts, Media and Technology (ICDAMT) (pp. 29-32). IEEE. doi: 10.1109/ICDAMT.2018.8376490.
Banchuin R. & Chaisricharoen R. (2017). The analysis of active circuit in fractional domain. In 2018 International ECTI Northern Section Conference on Electrical, Electronics, Computer and Telecommunications Engineering (ECTI-NCON) (pp. 21-24). doi: 10.1109/ECTI-NCON.2018.8378274.
Banchuin R., & Chaisricharoen R. (2017). Alpha power law based model of random variation in nanometer FGMOSFET. In 2017 International Conference on Digital Arts, Media and Technology (ICDAMT) (pp. 250-253). IEEE. doi: 10.1109/ICDAMT.2017.7904971.
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