Banchuin, R. (2020). On the dimensional consistency aware fractional domain generalization of smplest chaotic circuits. Mathematical Problems in Engineering, 2020, Retrieved from https://doi.org/10.1155/2020/9862158
Banchuin, R. (2020). Analysis of memreactance with fractional kinetics. Mathematical Problems in Engineering, 2020, Retrieved from https://doi.org/10.1155/2020/2302604
Banchuin, R., & Chaisricharoen, R. (2019). The time dimensional measurability aware FDE based analysis of active circuit in the fractional domain. ECTI Transactions on Computer and Information Technology (ECTI-CIT), 13(1), 29-40.
Banchuin, R. (2019). Effects of parasitic fractional elements to the dynamics of memristor. Journal of Electrical and Computer Engineering, 2019. Retrieved from https://doi.org/10.1155/2019/4190641
In this research, we generalize a family of electronic parametric oscillators in the fractional domain by using a state of the art circuit element namely fractional memristor.
Banchuin, R., & Chaisricharoen, R. (2019, April). An SDE based Stochastic Analysis of Transformer. In 2019 Joint International Conference on Digital Arts, Media and Technology with ECTI Northern Section Conference on Electrical, Electronics, Computer and Telecommunications Engineering (ECTI DAMT-NCON) (pp. 310-313). Nan, Thailand . ECTI (sponsored by IEEE).
Porouhan, Parham. (2017). Pattern discovery, visualization and interaction data analytics in a process-aware multi-tabletop collaborative learning environment. (Doctoral dissertation). Bangkok: Siam University.
Banchuin, R. (2018). Comprehensive analytical models of random variations. In Kim Ho Yeap and Humaira Nisar (Eds.), Complementary metal wxide semiconductor (pp.89-108). London: IntechOpen. DOI: 10.5772/intechopen.72710
Banchuin R. & Chaisricharoen R. (2017). Probabilistic modelling of variation in FGMOSFET devices. ECTI-CIT, 11(1), 50-62. Retrieved from https://doi.org/10.37936/ecti-cit.2017111.63429
Banchuin R., & Chaisricharoen R. (2017). Alpha power law based model of random variation in nanometer FGMOSFET. In 2017 International Conference on Digital Arts, Media and Technology (ICDAMT) (pp. 250-253). IEEE. doi: 10.1109/ICDAMT.2017.7904971.
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