| Research Article: | Analysis of Memreactance with Fractional Kinetics |
| Author: | Rawid Banchuin |
| Email: | rawid.ban@siam.edu |
| Department/Faculty | Graduate Schools of IT, Siam University, Bangkok 10160 |
| Published: | Mathematical Problems in Engineering (Impact Factor 1.179) |
Citation
Banchuin, R. (2020). Analysis of memreactance with fractional kinetics. Mathematical Problems in Engineering, 2020, Retrieved from https://doi.org/10.1155/2020/2302604
ABSTRACT
In this work, the analysis of the memreactance, i.e., meminductor and memcapacitor, with fractional-order kinetics has been proposed. The meminductances, memcapacitances, and related parameters due to both DC and periodic input waveforms have been derived. The behavioral analysis has been thoroughly performed with the aid of numerical simulation. The effects of fractional-order kinetics have been explored where both linear and nonlinear dopant drift scenarios have been considered. Moreover, the emulation of memreactance with fractional-order kinetics by using the memristor and the effect of the fractional-order kinetics on the memreactance-based circuits have also been mentioned along with the extension of our results to the fractional-order memreactance.
Analysis of memreactance with fractional kinetics
Graduate Schools, Siam University, Bangkok, Thailand
Related:
- Effects of parasitic fractional elements to the dynamics of memristor
- On The Fractional domain Generalization of Memristive Parametric Oscillators
- An SDE based Stochastic Analysis of Transformer
- A Tensor Algebraic Model of On-chip Monolithic Transformer
- Time Domain FDE Based Analysis of Active Fractional Circuit
- The Analysis of Active Circuit in Fractional Domain
- Alpha Power Law Based Model of Random Variation in Nanometer FGMOSFET
- Novel expressions for time domain responses of fractance device
- Analysis of Random Variation in Subthreshold FGMOSFET